Low-Current Spin Transfer Torque MRAM

被引：0

作者：

Worledge, D. ^{[1
,2
]}

Annunziata, A. J. ^{[1
,2
]}

Brown, S. ^{[1
,2
]}

Chen, W. ^{[1
]}

Harms, J. ^{[1
]}

Hu, G. ^{[1
,2
]}

Kim, Y. ^{[2
]}

Kothandaraman, C. ^{[1
,2
]}

Lauer, G. ^{[1
,2
]}

Lee, J. ^{[2
]}

Liu, L. ^{[1
,2
]}

Murthy, S. ^{[1
]}

Nowak, J. ^{[1
,2
]}

O'Sullivan, E. ^{[1
,2
]}

Park, J. ^{[2
]}

Robertazzi, R. ^{[1
,2
]}

Sun, J. Z. ^{[1
,2
]}

Trouilloud, P. ^{[1
,2
]}

机构：

[1] IBM Micron MRAM Alliance, Yorktown Hts, NY USA

[2] IBM Samsung MRAM Alliance, Yorktown Hts, NY USA

来源：

2015 IEEE MAGNETICS CONFERENCE (INTERMAG) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

DA-02

引用

页数：1

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