pMOS-only pW-power voltage reference with sub-10 ppm/°C trimmed temperature coefficient and sub-100 ppm/V line sensitivity

被引:4
|
作者
Azimi, Mohammad [1 ]
Habibi, Mehdi [1 ]
Crovetti, Paolo [2 ]
机构
[1] Univ Isfahan, Dept Elect Engn, Sensors & Interfaces Res Grp, Esfahan, Iran
[2] Politecn Torino, Dept Elect & Telecommun DET, I-10129 Turin, Italy
关键词
low power; LS regulator; subthreshold region; temperature compensation; voltage reference generator; CMOS; PICOWATT;
D O I
10.1002/cta.3569
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a new ultra-low-power voltage reference based on a two-stage, all-pMOS topology operating in the subthreshold region is proposed to uniquely meet the pW-power range power consumption requirements of emerging Internet-of-Things applications without significantly compromising the temperature coefficient (TC) and the line sensitivity (LS) performance. The proposed circuit consists of the LS regulator, TC corrector, and TC trimming sections. Based on post-layout Monte Carlo simulations in 180-nm CMOS, the proposed circuit operates with 0.8- to 2.4-V supply potential and generates a reference voltage of 206 mV with a process spread of 7.8%, achieving an average calibrated TC of 4.4 ppm/degrees C in the temperature range of -20 degrees C to 80 degrees C, and an average LS of 51.5 ppm/V with a power consumption of 25.9 pW at 25 degrees C (469.1 pW at 80 degrees C).
引用
收藏
页码:2638 / 2653
页数:16
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  • [1] Nanopower CMOS Relaxation Oscillators With Sub-100 ppm/°C Temperature Coefficient
    Chiang, Yu-Hsuan
    Liu, Shen-Iuan
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2014, 61 (09) : 661 - 665
  • [2] A sub-1 V, 10 ppm/○C, nanopower voltage reference generator
    De Vita, Giuseppe
    Iannaccone, Giuseppe
    [J]. ESSCIRC 2006: PROCEEDINGS OF THE 32ND EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2006, : 307 - +
  • [3] A sub-1-V, 10 ppm/°C, nanopower voltage reference generator
    De Vita, Giuseppe
    Iannaccone, Giuseppe
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (07) : 1536 - 1542
  • [4] A Sub-1V Nanowatt CMOS Bandgap Voltage Reference with Temperature Coefficient of 13ppm/°C
    Fakharyan, Iman
    Ehsanian, Mehdi
    [J]. 2015 23RD IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE), 2015, : 1129 - 1132
  • [5] A 0.6 V 31 nW 25 ppm/°C MOSFET-only sub-threshold voltage reference
    Liang, Yuhua
    Zhu, Zhangming
    [J]. MICROELECTRONICS JOURNAL, 2017, 66 : 25 - 30
  • [6] Ultra-Low-Power Sub-1 V 29 ppm/°C Voltage Reference and Shared-Resistive Current Reference
    Shetty, Darshan
    Steffan, Christoph
    Holweg, Gerald
    Boesch, Wolfgang
    Grosinger, Jasmin
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2023, 70 (03) : 1030 - 1042
  • [7] Ultra-Low-Power Sub-1 V 29 ppm C Voltage Reference and Shared-Resistive Current Reference
    Shetty, Darshan
    Steffan, Christoph
    Holweg, Gerald
    Bosch, Wolfgang
    Grosinger, Jasmin
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2022,
  • [8] A 0.6 V voltage reference circuit with 57 ppm/°C temperature coefficient, 73 KΩ output impedance and 0.080%/V line sensitivity for energy efficient applications
    Banerjee, Soham
    Chatterjee, Soumita
    Mukherjee, Koyel
    Pandit, Soumya
    [J]. PHYSICA SCRIPTA, 2024, 99 (03)
  • [9] A 5.6 ppm/°C Temperature Coefficient, 87-dB PSRR, Sub-1-V Voltage Reference in 65-nm CMOS Exploiting the Zero-Temperature-Coefficient Point
    Jiang, Jize
    Shu, Wei
    Chang, Joseph S.
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2017, 52 (03) : 623 - 633
  • [10] A 0.8V, 37nW, 42ppm/°C Sub-Bandgap Voltage Reference with PSRR of-81dB and Line Sensitivity of 51ppm/V in 0.18um CMOS
    Kim, Myungjun
    Cho, SeongHwan
    [J]. 2017 SYMPOSIUM ON VLSI CIRCUITS, 2017, : C144 - C145