High Resistivity and High Mobility in Localized Beryllium-Doped InAlAs/InGaAs Superlattices Grown at Low Temperature

被引：2
|
作者：
Dai, Deyan [1 ,2 ]
Liu, Hanqing [1 ,2 ]
Su, Xiangbin [1 ,2 ]
Shang, Xiangjun [1 ,2 ]
Li, Shulun [1 ,2 ]
Ni, Haiqiao [1 ,2 ]
Niu, Zhichuan [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
CRYSTALS | 2023年 / 13卷 / 10期
关键词：
low-temperature grown; localized Be doping; photoconductive antennas; InAlAs/InGaAs superlattices; THZ; DETECTORS;
D O I：
10.3390/cryst13101417
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
InAlAs:Be/InGaAs superlattices grown at low temperatures were investigated in this study. To obtain the highest resistivity and mobility simultaneously, a growth temperature above 200 degree celsius was applied. The electrical properties were conducted via Hall effect measurement and a photoresponse test. The experimental results demonstrate that the sample grown at 257.5 similar to 260 degree celsius exhibits the highest resistivity (1290 Omega x cm) and lowest carrier concentration (3.18 x 10(14) cm(-3)), along with the highest mobility (187.2 cm(2)/Vs). Furthermore, the highest photoresponse (1.21) relative to dark resistivity was obtained under 1500 nm excitation. The optimized growth parameter of InGaAs/InAlAs multilayered structures is of great significance for fabricating high-performance terahertz photoconductive semiconductor antennas.
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页数：11
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