Structural, dielectric and electrical properties of Se96-xSn4Sbx(x=0, 2, 4, 6, and 8) glassy alloys

Structural, dielectric and electrical properties of the Se96-xSn4Sbx (x = 0, 2, 4, 6, and 8) glassy alloys, which were prepared by conventional melt quench technique were investigated. The binary sample (x = 0) is polycrystalline, consisting of nanorods stuck with nanoparticles, while the ternary samples (x = 2, 4, 6, and 8) are amorphous. Measured properties, such as the dielectric constant, loss, and conductivity, are found to be functions of temperature and frequency. Dielectric constant and loss are maximum for x = 0 composition and decreased significantly on the inclusion of Sb (ternary compositions). DC and AC conductivities are thermally activated processes for all compositions. With the addition of Sb in place of Se in the studied system, both conductivities have been reduced by several orders of magnitude, accompanied by a change in the conduction mechanism from the CBH model with NVAP to the CBH with IVPA.(c) 2022 Elsevier B.V. All rights reserved.