Thermal transport, thermomechanical, and dielectric properties of chalcogenide Se98-xAg2Inx (x=0, 2, 4, 6) system

The present work reports a detailed study of some physical properties of some novel glasses of Se98-xAg2Inx (x = 0, 2, 4, 6) system. Measurements of thermal transport properties (i.e., thermal conductivity, kappa, and thermal diffusivity, chi(e)) have been carried out using the transient plane source technique. Specific heat measurements have been done by differential scanning calorimetry. Thermomechanical properties (i.e., Vickers hardness, H-v, and modulus of elasticity, E) have been evaluated by the indenter test. The minimal energy for formation of microvoids, E-h, and microvoids volume, V-h, of the previously mentioned glassy system are discussed in terms of microhardness, H-v. Temperature and frequency dependence of dielectric constant, epsilon(1), and dielectric loss, epsilon(2), for the same system were measured in the frequency (50 Hz - 1000 kHz) and temperature (303-338 K) range. The experimental results illustrate that the values of dielectric constant, epsilon(1), and dielectric loss, epsilon(2), are decreased with frequency and increased with temperature. The maximum barrier height, W-b, is calculated using the dielectric measurements according to the Guintini equation. The morphology and microstructural analysis of as-prepared alloys are confirmed by X-ray diffraction, scanning electron microscope, and transmission electron microscope.