Advances in mobility enhancement of ITZO thin-film transistors: a review

被引：8

作者：

Chen, Feilian ^{[1
]}

Zhang, Meng ^{[1
]}

Wan, Yunhao ^{[2
]}

Xu, Xindi ^{[2
]}

Wong, Man ^{[3
]}

Kwok, Hoi-Sing ^{[3
]}

机构：

[1] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China

[2] Shenzhen Univ, Inst Microscale Optoelect IMO, Shenzhen 518060, Peoples R China

[3] Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect Technol, Kowloon, Clear Water Bay, Hong Kong, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2023年 / 44卷 / 09期

基金：

中国国家自然科学基金;

关键词：

thin-film transistor (TFT); indium-tin-zinc oxide (ITZO) TFT; mobility; active matrix (AM) displays; BIAS STABILITY; ELECTRICAL CHARACTERISTICS; OXYGEN VACANCY; PERFORMANCE; LAYER; TEMPERATURE; PASSIVATION; TFTS; RESISTANCE; DISPLAYS;

D O I：

10.1088/1674-4926/44/9/091602

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.

引用

页数：15

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