Tolerance of the MIMOSIS-1 CMOS Monolithic Active Pixel Sensor to ionizing radiation

被引:0
|
作者
Darwish, H. [1 ,2 ,3 ]
Andary, J. [1 ]
Arnoldi-Meadows, B. [1 ]
Artz, O. [1 ]
Baudot, J. [2 ]
Bertolone, G. [2 ]
Besson, A. [2 ]
Bialas, N. [1 ]
Bugiel, R. [2 ]
Claus, G. [2 ]
Colledani, C. [2 ]
Deveaux, M. [3 ]
Dorokhov, A. [2 ]
Doziere, G. [2 ]
El Bitar, Z. [2 ]
Froehlich, I. [1 ,3 ]
Goffe, M. [2 ]
Hebermehl, F. [1 ]
Himmi, A. [2 ]
Hu-Guo, C. [2 ]
Jaaskelainen, K. [2 ]
Keller, O. [6 ]
Koziel, M. [1 ]
Matejcek, F. [1 ]
Michel, J. [1 ]
Morel, F. [2 ]
Muentz, C. [1 ]
Pham, H. [2 ]
Schmidt, C. J. [3 ]
Schreiber, S. [1 ]
Specht, M. [2 ]
Spicker, D. [1 ]
Stroth, J. [1 ,3 ,4 ]
Valin, I. [2 ]
Weirich, R. [1 ]
Zhao, Y. [2 ]
Winter, M. [5 ]
机构
[1] Goethe Univ Frankfurt, Frankfurt, Germany
[2] Univ Strasbourg, CNRS, IPHC UMR 7178, Strasbourg, France
[3] GSI Helmholtzzentrum Schwerionenforsch GmbH, Darmstadt, Germany
[4] Helmholtz Forsch Akad Hessen FAIR, Frankfurt, Germany
[5] Univ Paris Saclay, IJCLab, CNRS, UMR9012, Orsay, France
[6] Facil Antiproton & Ion Res Europe GmbH, Darmstadt, Germany
关键词
Particle tracking detectors (Solid-state detectors); Pixelated detectors and associated VLSI electronics; Radiation-hard detectors; Si microstrip and pad detectors;
D O I
10.1088/1748-0221/18/06/C06013
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
MIMOSIS is a CMOS Monolithic Active Pixel Sensor (CPS) developed to equip the Micro Vertex Detector (MVD) of the Compressed Baryonic Matter (CBM) experiment at FAIR/GSI. The sensor will combine a spatial resolution of -5 itm with a time resolution of 5 its and provide a peak hit rate capability of similar to 80 MHz/cm2. To fulfil its task, MIMOSIS will have to withstand ionising radiation doses of similar to 5 MRad and fluences of similar to 7 x 1013 neq/cm2 per year of operation. The paper summarises major requirements of the CBM-MVD and compares them to the detection performances of the first full scale prototype, called MIMOSIS-1, recently evaluated in the laboratory and with particle beams. The tolerance of the sensor to the expected ionising radiation load was evaluated; the paper describes the measurements performed and their outcome.
引用
收藏
页数:10
相关论文
共 50 条
  • [21] Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors
    Schioppa, Enrico Junior
    Bates, Richard
    Buttar, Craig
    Dalla, Marco
    Van Hoorne, Jacobus Willem
    Kugathasan, Thanushan
    Maneuski, Dzmitry
    Tobon, Cesar Augusto Marin
    Musa, Luciano
    Pernegger, Heinz
    Riedler, Petra
    Riegel, Christian
    Sbarra, Carla
    Schaefer, Douglas Michael
    Sharma, Abhishek
    Snoeys, Walter
    Sanchez, Carlos Solans
    2017 17TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2017, : 42 - 48
  • [22] CMOS ACTIVE PIXEL IMAGE SENSOR
    MENDIS, S
    KEMENY, SE
    FOSSUM, ER
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) : 452 - 453
  • [23] Recent development on CMOS monolithic active pixel sensors
    Rizzo, G.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 576 (01): : 103 - 108
  • [24] Radiation hardness studies on CMOS monolithic pixel sensors
    Battaglia, Marco
    Bisello, Dario
    Contarato, Devis
    Denes, Peter
    Doering, Dionisio
    Giubilato, Piero
    Kim, Tae Sung
    Mattiazzo, Serena
    Radmilovic, Velimir
    Zalusky, Sarah
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2010, 624 (02): : 425 - 427
  • [25] Monolithic Active Pixel Sensor for dosimetry application
    Cannillo, F
    Deptuch, G
    Dulinski, W
    ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 63 - 66
  • [26] DEPFET, a monolithic active pixel sensor for the ILC
    Velthuis, J. J.
    Kohrs, R.
    Mathes, M.
    Raspereza, A.
    Reuen, L.
    Andricek, L.
    Koch, M.
    Dolezal, Z.
    Fischer, P.
    Frey, A.
    Giesen, F.
    Kodys, P.
    Kreidl, C.
    Krueger, H.
    Lodomez, P.
    Lutz, G.
    Moser, H. G.
    Richter, R. H.
    Sandow, C.
    Scheirich, D.
    von Toerne, E.
    Trimpl, M.
    Wei, Q.
    Wermes, N.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 579 (02): : 685 - 689
  • [27] Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 018 μm CMOS process
    Zhang, Ying
    Zhu, Hongbo
    Zhang, Liang
    Fu, Min
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2016, 831 : 99 - 104
  • [28] A novel CMOS Monolithic Active Pixel Sensor with analog signal processing and 100% fill factor
    Crooks, J. P.
    Ballin, J. A.
    Dauncey, P. D.
    Magnan, A. -M.
    Mikami, Y.
    Miller, O.
    Noy, M.
    Rajovic, V.
    Stanitzki, M.
    Stefanov, K. D.
    Turchetta, R.
    Tyndel, M.
    Villani, E. G.
    Watson, N. K.
    Wilson, J. A.
    2007 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-11, 2007, : 931 - 935
  • [29] A large area CMOS monolithic active pixel sensor for extreme ultra violet spectroscopy and imaging
    Prydderch, M
    Waltham, N
    Morrissey, Q
    French, M
    Turchetta, R
    Pool, P
    SENSORS AND CAMERA SYSTEMS FOR SCIENTIFIC, INDUSTRIAL, AND DIGITAL PHOTOGRAPHY APPLICATIONS V, 2004, 5301 : 175 - 185
  • [30] A 512 x 512 CMOS Monolithic Active Pixel Sensor with integrated ADCs for space science
    Prydderch, ML
    Waltham, NJ
    Turchetta, R
    French, MJ
    Holt, R
    Marshall, A
    Burt, D
    Bell, R
    Pool, P
    Eyles, I
    Mapson-Menard, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 512 (1-2): : 358 - 367