1,2,3-Triazolylfullerene-based n-type semiconductor materials for organic field-effect transistors

被引：2

作者：

Sadretdinova, Zarema R. ^{[1
]}

Akhmetov, Arslan R. ^{[1
]}

Salikhov, Renat B. ^{[2
]}

Mullagaliev, Ilnur N. ^{[2
]}

Salikhov, Timur R. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Petrochemistry & Catalysis, Ufa Fed Res Ctr, Ufa 450075, Russia

[2] Ufa Univ Sci & Technol, Ufa 450076, Russia

来源：

MENDELEEV COMMUNICATIONS | 2023年 / 33卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

organic field-effect transistors; triazolylfullerenes; 1; 2; 3-triazoles; fullerenes; mobility of charge carriers; surface roughness;

D O I：

10.1016/j.mencom.2023.04.007

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The paper describes new organic field-effect transistors with 1-(4-aryl-1,2,3-triazol-1-yl)-2-butylfullerene as a semiconductor layer. The prototype transistor having 2-naphthyl moieties have higher electron mobilities (0.090 +/- 10% cm2 V-1 s-1) than that with with biphenyl-4-yl moieties (0.033 +/- 10% cm2 V-1 s-1). The thin film surfaces of triazolylfullerenes with 3-thienyl and 2-naphthyl groups were more uniform and had a lower roughness, which is confirmed by atomic force microscopy studies.

引用

页码：320 / 322

页数：3

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