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n-Type semiconducting polymers based on an bithiophene imide-bridged isoindigo for organic field-effect transistors
被引:0
|作者:
Liu, Min
[1
]
Wang, Dong
[2
,3
]
Li, Jianfeng
[2
]
Wang, Junwei
[2
]
Jeong, Sang Young
[3
]
Woo, Han Young
[3
]
Deng, Xianyu
[3
]
Yang, Kun
[2
,3
,4
]
Guo, Xugang
[2
]
机构:
[1] Huizhou Univ, Sch Chem & Mat Engn, Huizhou 516007, Guangdong, Peoples R China
[2] Southern Univ Sci & Technol SUSech, Dept Mat Sci & Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China
[3] Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen Key Lab Adv Mat, Shenzhen 518055, Guangdong, Peoples R China
[4] Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Hunan, Peoples R China
基金:
中国国家自然科学基金;
中国博士后科学基金;
关键词:
STRUCTURE-PROPERTY CORRELATIONS;
ELECTRON-MOBILITY;
BACKBONE CONFORMATION;
CONJUGATED POLYMERS;
PERFORMANCE;
AMBIPOLAR;
OPTIMIZATION;
COPOLYMERS;
FULLERENE;
D O I:
10.1016/j.dyepig.2024.112176
中图分类号:
O69 [应用化学];
学科分类号:
081704 ;
摘要:
n -Type polymer semiconductors are essential for enabling high-performance organic electronic devices; however, their development still remains a challenge. Herein, we reported a new electron-deficient building block, i.e. bithiophene imide (BTI)-bridged isoindigo (IID), BTIID, through a Knoevenagel condensation reaction between the bisaldehyde BTI and the alkylated indolinones. Three donor-acceptor (D -A) copolymers were then successfully synthesized via standard Stille coupling reaction based on this novel building block, which exhibit highly planar backbones and low-lying lowest unoccupied molecular orbitals (LUMO) energy levels. When integrated into organic field-effect transistors (OFETs), these polymers demonstrated unipolar n -type transport characteristics with a highest electron mobility of 5.79 x 10 -4 cm 2 V -1 s -1 . Our research results indicate that the design of strong electron-withdrawing units via integrating two different electron-acceptor units into one single structure represents a promising strategy for developing n -type polymer semiconductors with low-lying LUMO energy levels.
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