Study of Ferroelectric HfO2-ZrO2 Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter

被引：1

作者：

Zhong, Xin-Chan ^{[1
]}

Yan, Siao-Cheng ^{[1
]}

Huang, Ming-Yueh ^{[1
]}

Chang, Chih-Siang ^{[1
]}

Sun, Chong-Jhe ^{[1
]}

Chen, Bo-An ^{[1
]}

Lin, Yi-Wen ^{[1
]}

Wu, Yung-Chun ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan

来源：

2023 SILICON NANOELECTRONICS WORKSHOP, SNW | 2023年

关键词：

D O I：

10.23919/SNW57900.2023.10183981

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

In this study, the SL HZO GAAFET were fabricated and compared with theHZO GAAFET. The SL HZO device showed higher Ion/Ioff, lower SS, smaller DIBL, and higher maximum Gm. Additionally, the n- and p-type SL HZO GAAFETs were used to demonstrate the feasibility of a CMOS inverter with complete switching functionality. These results suggest that SL HZO GAAFETs hold promise for future nanoelectronics applications.

引用

页码：33 / 34

页数：2

共 37 条

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