A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology

被引：0
|
作者：
Mehraban, Haniye [1 ]
Park, Wan-Soo [2 ]
Jo, Hyeon-Bin [2 ]
Choi, Su-Min [2 ]
Kim, Dae-Hyun [2 ]
Kim, Sang-Kuk [3 ]
Yun, Jacob [3 ]
Kim, Ted [3 ]
Choi, Wooyeol [1 ]
机构：
[1] Oklahoma State Univ, Stillwater, OK 74078 USA
[2] Kyungpook Natl Univ, Daegu, South Korea
[3] QSI Inc, Cheonan, South Korea
来源：
2023 IEEE TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS, WMCS | 2023年
基金：
新加坡国家研究基金会;
关键词：
Coplanar waveguide (CPW); high-electron-mobility transistor (HEMT); indium phosphide (InP); low noise amplifier (LNA); W-band;
D O I：
10.1109/WMCS58822.2023.10194275
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a W-band low noise amplifier (LNA) in 50-nm InP high-electron-mobility-transistor (HEMT) technology. The LNA employs a threestage design in common-source (CS) configuration using 2x20 mu m transistors, coplanar waveguides (CPW), metal-insulator-metal capacitors (MIM), and NiCr-based thin film resistors (TFR). The first two stages employ inductive source feedback for concurrent noise and gain matching and in-band stability. The 3rd stage utilizes resistive parallel feedback. This design shows a simulated noise figure of 1.4 dB with a measured associated gain of 14 dB at 94 GHz while consuming a DC power of 75 mW.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] A W-band 100 nm InP HEMT Ultra Low Noise Amplifier
    Farkas, D. S.
    Sarkozy, S. J.
    Katz, R.
    [J]. 2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2014, : 229 - 231
  • [2] A 67-116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology
    Thome, Fabian
    Schafer, Frank
    Tuerk, Sener
    Yagoubov, Pavel
    Leuther, Arnulf
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (05) : 430 - 433
  • [3] Low noise W-band MMMIC amplifier using 50nm InP technology for millimeterwave receivers applications
    Elgaid, K
    McLelland, H
    Stanley, CR
    Thayne, IG
    [J]. 2005 International Conference on Indium Phosphide and Related Materials, 2005, : 523 - 525
  • [4] An ultra-low power InAs/AlSb HEMT W-Band low-noise amplifier
    Hacker, JB
    Bergman, J
    Nagy, G
    Sullivan, G
    Kadow, C
    Lin, HK
    Gossard, AC
    Rodwell, M
    Brar, B
    [J]. 2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4, 2005, : 1029 - 1032
  • [5] A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology
    Thome, Fabian
    Brueckner, Peter
    Leone, Stefano
    Quay, Ruediger
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2022, 70 (02) : 1367 - 1376
  • [6] Low-power W-Band CPWG InAs/AlSb HEMT low-noise amplifier
    Riemer, PJ
    Buhrow, BR
    Hacker, JB
    Bergman, J
    Brar, B
    Gilbert, BK
    Daniel, ES
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (01) : 40 - 42
  • [7] A W-Band 6.8 mW Low-Noise Amplifier in 90 nm CMOS Technology Using Noise Measure
    Yeh, Po-Chen
    Kuo, Chien-Nan
    [J]. 2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2019,
  • [8] W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology
    Thome, Fabian
    Leuther, Arnulf
    Heinz, Felix
    Ambacher, Oliver
    [J]. 2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, : 168 - 171
  • [9] W-band Low-Noise Amplifier with 50 nm In0.8GaP/In0.4AlAs/In0.35GaAs Metamorphic HEMT
    Kim, Sung-Won
    Koh, Yu-Min
    Choi, Woo-Yeol
    Kim, Hyung-Tae
    Kwon, Young-Woo
    Seo, Kwang-Seok
    [J]. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 213 - 215
  • [10] Study of The W-band Monolithic Low-noise Amplifier
    Dang, Lili
    Cheng, Zhiqun
    Liu, Tang
    Zhang, Jian
    Fang, Zhiming
    Chen, Ruirui
    [J]. 2015 IEEE 16TH INTERNATIONAL CONFERENCE ON COMMUNICATION TECHNOLOGY (ICCT), 2015, : 266 - 269
12345