W-band Low-Noise Amplifier with 50 nm In0.8GaP/In0.4AlAs/In0.35GaAs Metamorphic HEMT

被引：0
|
作者：
Kim, Sung-Won [1 ]
Koh, Yu-Min [1 ]
Choi, Woo-Yeol [1 ]
Kim, Hyung-Tae [1 ]
Kwon, Young-Woo [1 ]
Seo, Kwang-Seok [1 ]
机构：
[1] Seoul Natl Univ, Dept Elect Engineer & Comp Sci, Seoul, South Korea
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
metamorphic; HEMT; f(T); f(max); T-gate;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
W-band low-noise amplifier (LNA) has been successfully demonstrated with 50 nm metamorphic HEMT (MHEMT) technologies. 50 nm MHEMT showed a g(m.max) of 760 mS/mm, a f(T) of 216 GHz, and a f(max) of 400 GHz in spite of indium content of 35% in the channel. W-band LNA with three-stage showed the small signal gain of 9.4 +/- 1.8 dB from 40 GHz to 110 GHz. These results are well suited for high frequency applications.
引用
收藏
页码：213 / 215
页数：3
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