A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology

被引：0
|
作者：
Mehraban, Haniye [1 ]
Park, Wan-Soo [2 ]
Jo, Hyeon-Bin [2 ]
Choi, Su-Min [2 ]
Kim, Dae-Hyun [2 ]
Kim, Sang-Kuk [3 ]
Yun, Jacob [3 ]
Kim, Ted [3 ]
Choi, Wooyeol [1 ]
机构：
[1] Oklahoma State Univ, Stillwater, OK 74078 USA
[2] Kyungpook Natl Univ, Daegu, South Korea
[3] QSI Inc, Cheonan, South Korea
来源：
2023 IEEE TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS, WMCS | 2023年
基金：
新加坡国家研究基金会;
关键词：
Coplanar waveguide (CPW); high-electron-mobility transistor (HEMT); indium phosphide (InP); low noise amplifier (LNA); W-band;
D O I：
10.1109/WMCS58822.2023.10194275
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a W-band low noise amplifier (LNA) in 50-nm InP high-electron-mobility-transistor (HEMT) technology. The LNA employs a threestage design in common-source (CS) configuration using 2x20 mu m transistors, coplanar waveguides (CPW), metal-insulator-metal capacitors (MIM), and NiCr-based thin film resistors (TFR). The first two stages employ inductive source feedback for concurrent noise and gain matching and in-band stability. The 3rd stage utilizes resistive parallel feedback. This design shows a simulated noise figure of 1.4 dB with a measured associated gain of 14 dB at 94 GHz while consuming a DC power of 75 mW.
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收藏
页数：4
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