Implementation of Zinc Sulfide (ZnS) as a Suitable Buffer Layer for CZTS Solar Cell from Numerical Analysis

被引：5
|
作者：
Dakua, Pratap Kumar [1 ]
Panda, Deepak Kumar [1 ]
机构：
[1] VIT AP Campus, Sch Elect, Vijayawada 522237, India
来源：
MICRO AND NANOELECTRONICS DEVICES, CIRCUITS AND SYSTEMS | 2023年 / 904卷
关键词：
CZTS solar cell; Buffer layer; SCAPS; 1D; THIN-FILMS;
D O I：
10.1007/978-981-19-2308-1_27
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, zinc sulfide (ZnS) is taken as a suitable buffer layer in the copper zinc tin sulfide (CZTS) solar cell. The solar cell parameters have been calculated by considering the thickness and the bandgap of the ZnS layer using SCAPS 1D software. This proposed device model witnessed a good performance in all the parameters such as an efficiency of 22.08% with open-circuit voltage of 0.93 V, short-circuit current of 28.27 mA/cm2, and fill-factor of 82.61% through ZnS as a buffer layer for the copper zinc tin sulfide (CZTS) solar cell. When the absorber layer thickness is between 2 and 4 mu m, we can obtain the high efficiency. By choosing the ZnS bandgap between 3.1 and 3.25 eV, the efficiency will be higher as obtained in the proposed study.
引用
收藏
页码：257 / 264
页数：8
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