A Comprehensive Study of CZTS Solar Cell Simulation with ZnSe Buffer Layer

The absorber layer for a CZTS solar cell is a compound semiconductor which has favorable electrical characteristics. Researchers are highly interested in this to investigate mostly because of its earth-abundancy and nontoxicity feature. In our research, we have used Zinc Selenide as a buffer layer for CZTS solar cell and investigated its parameters for the suitability of this as a buffer layer. A ZnO vertical bar ZnSe vertical bar CZTS structure was used for the simulation. We have optimized few parameters using SCAPS 3302 simulation software. The performance was recorded at different CZTS layer thickness, Buffer layer thickness, doping concentration and temperature. CZTS layer was varied between 0.5-4 micrometer, the buffer layer was varied between 0.03-0.1 micrometer, doping concentration was varied between 1*10(10-)10(14) per cm(3) and temperature was varied between 300-400K. These parameters were optimized and the best energy conversion efficiency we got 11.49% with V-oc= 0.8636V J(Sc) = 28.4825 mA/cm(2), FF= 46.70%.