Numerical analysis of potential buffer layer for Cu2ZnSnS4 (CZTS) solar cells

被引：23
|
作者：
Benzetta, Abd El Halim [1 ]
Mahfoud, Abderrezek [2 ]
Elamine, Djeghlal Mohammed [3 ]
机构：
[1] Ecole Mil Polytech, Lab Genie Mat, BP 17 Bordj El Bahri, Algiers 16046, Algeria
[2] CDER, UDES, Ctr Dev Energies Renouvelables, Tipasa 42415, Algeria
[3] Ecole Natl Polytech, Lab Sci & Genie Mat, BP 182 El Harrach, Algiers, Algeria
来源：
OPTIK | 2020年 / 204卷
关键词：
CZTS; CdS; ZnS; Thin film; SCAPS-1D; Solar cell; EFFICIENCY;
D O I：
10.1016/j.ijleo.2019.164155
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this work, CZTS solar cell with heterojunctions CdS/CZTS and ZnS/CZTS have been simulated using the Solar Cell Capacitance Simulator (SCAPS-1D). The effect of thickness and doping concentration on the performances of both structures has been investigated. It is obtained that the optimum thickness is about 30 nm and the best doping concentration is around 5E16 cm(-3) and 5E17 cm(-3) for CdS/CZTS and ZnS/CZTS structures respectively. By using the buffer layers optimum parameters (thickness and doping concentration), the electrical efficiency of CZTS solar cell is boosted from 12.03 % to 12.38 % for CdS/CZTS structure and from 12.51 % to 12.78 % for ZnS/CZTS structure. The obtained results reveal some valued insights for manufacturing Cd_free CZTS solar cells.
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页数：7
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