Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots

被引：0
|
作者：
Li, Xiaohui [1 ]
Xu, Qian [1 ]
Zhang, Ziyang [2 ]
机构：
[1] Shaanxi Normal Univ, Sch Phys & Informat Technol, Xian 710119, Peoples R China
[2] Qingdao Univ, Sch Elect & Informat Engn, Qingdao 266071, Peoples R China
来源：
NANOMATERIALS | 2023年 / 13卷 / 06期
关键词：
D O I：
10.3390/nano13060960
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Growth and characterization of InGaAs quantum dots on metamorphic GaAsP templates by molecular beam epitaxy
    Grandal, Javier
    Grassman, Tyler J.
    Carlin, Andrew M.
    Brenner, Mark R.
    Galiana, Beatriz
    Carlin, John A.
    Yang, Limei
    Mills, Michael J.
    Ringel, Steven A.
    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012, : 1783 - 1787
  • [22] Self organization of nitride quantum dots by molecular beam epitaxy
    Daudin, B
    Widmann, F
    Feuillet, G
    Samson, Y
    Rouvière, JL
    Pelekanos, N
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 330 - 334
  • [23] High quality quantum dots fabricated by molecular beam epitaxy
    Lee, CP
    Liu, DC
    APPLIED SURFACE SCIENCE, 1996, 92 (1-4) : 519 - 525
  • [24] Molecular-beam epitaxy of InSb/GaSb quantum dots
    Deguffroy, N.
    Tasco, V.
    Baranov, A. N.
    Tournie, E.
    Satpati, B.
    Trampert, A.
    Dunaevskii, M. S.
    Titkov, A.
    Ramonda, M.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
  • [25] Direct electron beam patterning and molecular beam epitaxy growth of InAs: Site definition of quantum dots
    Yokota, H.
    Tsunashima, K.
    Iizuka, K.
    Okamoto, H.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (03): : 1097 - 1099
  • [26] Selective molecular beam epitaxy for formation of networks of InP-based InGaAs/InAlAs quantum wires and dots
    Fujikura, H
    Hanada, Y
    Kihara, M
    Hasegawa, H
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 459 - 462
  • [27] Molecular Beam Epitaxy Growth for Quantum Cascade Lasers
    Kosiel, K.
    Szerling, A.
    Kubacka-Traczyk, J.
    Karbownik, P.
    Pruszynska-Karbownik, E.
    Bugajski, M.
    ACTA PHYSICA POLONICA A, 2009, 116 (05) : 806 - 813
  • [28] Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy
    Luo, XD
    Xu, ZY
    Wang, YQ
    Wang, WX
    Wang, JN
    Ge, WK
    JOURNAL OF CRYSTAL GROWTH, 2003, 247 (1-2) : 99 - 104
  • [29] Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy
    Zhang, Z. P.
    Song, Y. X.
    Chen, Q. M.
    Wu, X. Y.
    Zhu, Z. Y. S.
    Zhang, L. Y.
    Li, Y. Y.
    Wang, S. M.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (46)
  • [30] Growth of stacked GaSb GaAs self-assembled quantum dots by molecular beam epitaxy
    Suzuki, K
    Arakawa, Y
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1205 - 1208
12345