Improved performance of quantum dot solar cells by type-II InAs/ GaAsSb structure with moderate Sb composition

被引：4

作者：

Wang, Shenglin ^{[1
,2
]}

Wang, Shuai ^{[1
,2
]}

Yang, Xiaoguang ^{[1
,2
]}

Lv, Zunren ^{[1
,2
]}

Chai, Hongyu ^{[1
,2
]}

Meng, Lei ^{[1
,2
]}

Yang, Tao ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

HELIYON | 2023年 / 9卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Solar cells; Intermediate band; Quantum dots; Type-II band; Fill factor; EFFICIENCY; LIMIT;

D O I：

10.1016/j.heliyon.2023.e20005

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We demonstrate improved performance of quantum dot solar cells (QDSCs) by type-II InAs/ GaAsSb structure. With a moderate Sb composition of 18% and high quality QDs, a high efficiency of 17.31% under AM1.5 G illumination is achieved, showing an improvement of 11.25% in efficiency relative to type-I InAs/InGaAs QDSC. This improvement can be attributed to a high fill factor (FF) of 72.37% compared to 63% of the latter because the type-II structure effectively suppresses carrier recombination losses in QDs. As Sb composition increases to 24%, the FF maintains at a high level of 72.67%, but the efficiency drops to 17% because the elevation of valence band (VB) in GaAsSb capping layer further enhances the hole confinement. And the confinement reduces external quantum efficiency (EQE) and short-circuit current density (Jsc). These results prove the potential of improving efficiency of QDSCs by type-II structure.

引用

页数：7

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