Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer

被引：43
|
作者：
Jang, Y. D. [1 ]
Badcock, T. J. [1 ]
Mowbray, D. J. [1 ]
Skolnick, M. S. [1 ]
Park, J. [2 ]
Lee, D. [2 ]
Liu, H. Y. [3 ]
Steer, M. J. [4 ]
Hopkinson, M. [4 ]
机构：
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[3] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
[4] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 25期
基金：
新加坡国家研究基金会; 英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2949741
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carrier lifetimes have been measured for long-wavelength emitting InAs quantum dots (QDs) capped with a thin GaAsSb layer. Above a critical Sb composition, a type-II system is formed, resulting in an increase in the carrier lifetime. The carrier lifetime in a strongly type-II structure is increased by a factor similar to 54 in comparison to the lifetime in a type-I structure. In addition, the type-II carrier lifetime varies across the inhomogeneously broadened ground-state emission, while the type-I QD lifetime is invariant. (C) 2008 American Institute of Physics.
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页数：3
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