Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer

被引：43

作者：

Jang, Y. D. ^{[1
]}

Badcock, T. J. ^{[1
]}

Mowbray, D. J. ^{[1
]}

Skolnick, M. S. ^{[1
]}

Park, J. ^{[2
]}

Lee, D. ^{[2
]}

Liu, H. Y. ^{[3
]}

Steer, M. J. ^{[4
]}

Hopkinson, M. ^{[4
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[3] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

[4] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 25期

基金：

新加坡国家研究基金会; 英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2949741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier lifetimes have been measured for long-wavelength emitting InAs quantum dots (QDs) capped with a thin GaAsSb layer. Above a critical Sb composition, a type-II system is formed, resulting in an increase in the carrier lifetime. The carrier lifetime in a strongly type-II structure is increased by a factor similar to 54 in comparison to the lifetime in a type-I structure. In addition, the type-II carrier lifetime varies across the inhomogeneously broadened ground-state emission, while the type-I QD lifetime is invariant. (C) 2008 American Institute of Physics.

引用

页数：3

共 50 条

[41] Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells
Dyksik, M.
Motyka, M.
Weih, R.
Hoefling, S.
Kamp, M.
Sek, G.
Misiewicz, J.
OPTICAL AND QUANTUM ELECTRONICS, 2017, 49 (02)
[42] Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells
M. Dyksik
M. Motyka
R. Weih
S. Höfling
M. Kamp
G. Sęk
J. Misiewicz
Optical and Quantum Electronics, 2017, 49
[43] Double capped InAs Quantum Dots with strain compensation layer grown on InP/Si substrate
Shirai, Takuto
Han, Xu
Ishizaki, Takahiro
Tsushima, Koki
Matsuura, Masaki
Shibukawa, Kota
Fujiwara, Keita
Sato, Motonari
Shimomura, Kazuhiko
2020 OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2020), 2020,
[44] Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer
Cisneros Tamayo, R.
Torchynska, T. V.
Polupan, G.
Guerrero Moreno, I. J.
Velazquez Lozada, E.
Shcherbyna, L.
SUPERLATTICES AND MICROSTRUCTURES, 2014, 71 : 168 - 176
[45] GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations
Ulloa, J. M.
Gargallo-Caballero, R.
Bozkurt, M.
del Moral, M.
Guzman, A.
Koenraad, P. M.
Hierro, A.
PHYSICAL REVIEW B, 2010, 81 (16):
[46] Engineering carrier lifetimes in type-II In(Ga)Sb/InAs mid-IR emitters
Yu, Lan
Zhong, Yujun
Dev, Sukrith
Wasserman, Daniel
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (02):
[47] Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers
A. Salhi
S. Alshaibani
Y. Alaskar
H. Albrithen
A. Albadri
A. Alyamani
M. Missous
Nanoscale Research Letters, 2019, 14
[48] Investigation of InGaAs strain reducing layer on the redshift of PL wavelength for inas quantum dots
Rengong Jingti Xuebao, 2007, 5 (1031-1034+1038):
[49] Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers
Salhi, A.
Alshaibani, S.
Alaskar, Y.
Albrithen, H.
Albadri, A.
Alyamani, A.
Missous, M.
NANOSCALE RESEARCH LETTERS, 2019, 14 (1):
[50] High optical quality of InAs quantum dots with an InAlAsSb strain-reducing layer
Chiu, Pei-Chin
Liu, Wei-Sheng
Shiau, Meng-Re
Chyi, Jen-Inn
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 171 - 173

← 1 2 3 4 5 →