Upheaving Self-Heating Effects from Transistor to Circuit Level using Conventional EDA Tool Flows

uIn this work, we are the first to demonstrate how well-established EDA tool flows can be employed to upheave Self-Heating Effects (SHE) from individual devices at the transistor level all the way up to complete large circuits at the final layout (i.e., GDS-II) level. Transistor SHE imposes an ever-growing reliability challenge due to the continuous shrinking of geometries alongside the non-ideal voltage scaling in advanced technology nodes. The challenge is largely exacerbated when more confined 3D structures are adopted to build transistors such as upcoming Nanosheet FETs and Ribbon FETs. By employing increasingly-confined structures and materials of poorer thermal conductance, heat arising within the transistor's channel is trapped inside and cannot escape. This leads to accelerated defect generation and, if not considered carefully, a profound risk to IC reliability. Due to the lack of EDA tool flows that can consider SHE, circuit designers are forced to take pessimistic worst-case assumptions (obtained at the transistor level) to ensure reliability of the complete chip for the entire projected lifetime - at the cost of sub-optimal circuit designs and considerable efficiency losses. Our work paves the way for designers to estimate less pessimistic (i.e., small yet sufficient) safety margins for their circuits leading to higher efficiency without compromising reliability. Further, it provides new perspectives and opens new doors to estimate and optimize reliability correctly in the presence of emerging SHE challenge through identifying early the weak spots and failure sources across the design.