A New Rounded Edge Fin Field Effect Transistor for Improving Self-Heating Effects

被引：20
|
作者：
Orouji, Ali A. [1 ]
Mehrad, Mahsa [1 ]
机构：
[1] Semnan Univ, Dept Elect Engn, Semnan 3519645399, Iran
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 12期
关键词：
MOSFETS; DESIGN; SOURCE/DRAIN; GENERATION; IMPACT;
D O I：
10.1143/JJAP.50.124303
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, a new rounded edge fin field-effect transistor (RE-FinFET) is proposed, where the edges of fins near source and drain regions are rounded in order to reduce self-heating effects. The key idea in this work is to control self-heating by reducing the thermal resistance. Moreover, our simulation results demonstrate that current of the device increases. Also, the series resistance reduces due to the rounded edges of fins near source and drain. Furthermore, using three-dimensional (3D) and two-carrier device simulator, we have examined various design issues of the RE-FinFET and provided the reasons for the improved performance in terms of self-heating and short channel effects. Our results suggest that RE-FinFET is an alternate structure for FinFETs, and expands the application of FinFETs to high temperature. (C) 2011 The Japan Society of Applied Physics
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Impact of the Self-Heating Effect on Nanosheet Field Effect Transistor Performance
    Smaani, Billel
    Paras, Neha
    Rahi, Shiromani Balmukund
    Song, Young Suh
    Yadav, Ramakant
    Tayal, Subham
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 12 (02)
  • [2] Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors
    Takahashi, Tsunaki
    Beppu, Nobuyasu
    Chen, Kunro
    Oda, Shunri
    Uchida, Ken
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
  • [3] Effect of Variations in Fin Thickness and Self-heating on FinFETs
    Varghese, Bibin
    Sruthi, G. S.
    Kumar, V. Vinod
    Kumar, U. Sajesh
    [J]. 2014 FIRST INTERNATIONAL CONFERENCE ON COMPUTATIONAL SYSTEMS AND COMMUNICATIONS (ICCSC), 2014, : 111 - 115
  • [4] Study on self-heating effect and lifetime in vertical-channel field effect transistor
    Myeong, Ilho
    Shin, Hyungcheol
    [J]. MICROELECTRONICS RELIABILITY, 2021, 119
  • [5] New method for observing self-heating effect using transistor efficiency signature
    Mori, C. A. B.
    Agopian, P. G. D.
    Martino, J. A.
    [J]. 2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2017,
  • [6] A new silicon-on-insulator structure of metal-oxide-semiconductor field effect transistor to reduce self-heating effect
    Lin, Q
    Zhang, ZX
    Zhu, M
    Xie, XY
    Song, HQ
    Lin, CL
    [J]. CHINESE PHYSICS LETTERS, 2003, 20 (01) : 158 - 160
  • [7] Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs
    Wang, Ashu
    Zeng, Lingyan
    Wang, Wen
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (03)
  • [8] Reduction of self-heating effect in (Ga)ZnO thin film transistor
    Amuthasurabi, M.
    Chandradass, J.
    Park, Seong-Ju
    Martin, Leenus Jesu
    [J]. SURFACE ENGINEERING, 2017, 33 (11) : 816 - 819
  • [9] Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations
    Ahmad, I.
    Kasisomayajula, V.
    Song, D. Y.
    Tian, L.
    Berg, J. M.
    Holtz, M.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)
  • [10] Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations
    Ahmad, I.
    Kasisomayajula, V.
    Song, D.Y.
    Tian, L.
    Berg, J.M.
    Holtz, M.
    [J]. Journal of Applied Physics, 2006, 100 (11):
12345