Growth of bismuth nanowires stimulated by Fe islands

In this work we present the results of studying the growth of bismuth nanowires (Bi NWs) on oxidized silicon substrates with predeposited islanded films of different metals (V, Re, Fe). We show that during the subsequent deposition of bismuth by radio frequency diode sputtering on such substrates Bi NWs grow longer and in a larger quantity than on bare substrates. Fe nanoparticles underlayer exerts the strongest influence on the growth of bismuth nanowires. Iron islands stimulate the formation of a continuous bismuth film deposited onto them at earlier stages in comparison with the clean oxidized silicon surface. In addition, they promote the earlier appearance of the [110]R (rhombohedral system) texture, which is favorable for the formation of centers of nucleation and subsequent growth of Bi NWs. Using this technique, Bi NWs with a length of about 15 mu m and a diameter of less than 100 nm were obtained on 27 nm thick bismuth films.