Structure and electronic properties of thin Ge2Sb2Te5 films produced by DC ion-plasma spattering

被引：2
|
作者：
Sultanbekov, S. [1 ]
Prikhodko, O. [2 ]
Almas, N. [3 ]
机构：
[1] Kazatomprom, Volkovgeol JSC, 168 Bogenbai Batyr St, Alma Ata 050012, Kazakhstan
[2] NAO Al Farabi Kazakh Natl Univ, IETP, 71 Al Farabi Avn, Alma Ata 050040, Kazakhstan
[3] Astana IT Univ, Dept Sci & Innovat, Mangilik Yel 55-11, Astana 010000, Kazakhstan
来源：
CHALCOGENIDE LETTERS | 2023年 / 20卷 / 07期
关键词：
Chalcogenide glassy semiconductors; Switching effect; PC-RAM; Atomic structure; Electronic properties;
D O I：
10.15251/CL.2023.207.487
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The optical properties of Ge2Sb2Te5 thin films were studied as a function of thickness. An increase in optical band gap with decreasing film thickness has been observed. The current-voltage characteristics measured in Ge2Sb2Te5 thin films in the current mode are studied. A decrease in switching time and threshold voltage with decreasing film thickness is established.
引用
收藏
页码：487 / 496
页数：10
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