Nanostructured Ge2Sb2Te5 chalcogenide films produced by laser electrodispersion

被引：0
|
作者：
D. A. Yavsin
V. M. Kozhevin
S. A. Gurevich
S. A. Yakovlev
B. T. Melekh
M. A. Yagovkina
A. B. Pevtsov
机构：
[1] Russian Academy of Sciences,Ioffe Physical
来源：
Semiconductors | 2014年 / 48卷
关键词：
Nanostructured Film; Deposition Duration; Chalcogenide Film; Laser Torch; Double Peaked Spectrum;
D O I：
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中图分类号：
学科分类号：
摘要：
Amorphous nanostructured films of a complex chalcogenide (Ge2Sb2Te5) are produced by laser electrodispersion and their structural and electrical properties are studied. It is found that the characteristic size of Ge2Sb2Te5 nanoparticles in the structure of the films is 1.5–5 nm.
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页码：1567 / 1570
页数：3
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