Characteristics of tunable aluminum-doped Ga2O3 thin films and photodetectors

被引：0
|
作者：
Ding, Si-Tong [1 ]
Chen, Yu-Chang [1 ]
Yu, Qiu-Jun [1 ]
Zeng, Guang [1 ]
Shi, Cai-Yu [1 ]
Shen, Lei [1 ]
Zhao, Xue-Feng [1 ]
Lu, Hong-Liang [1 ,2 ]
机构：
[1] Fudan Univ, Shanghai Inst Intelligent Elect & Syst, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] Jiashan Fudan Inst, Jiaxing, Zhejiang, Peoples R China
来源：
NANOTECHNOLOGY | 2024年 / 35卷 / 15期
基金：
中国国家自然科学基金; 国家重点研发计划;
关键词：
plasma-enhanced atomic layer deposition; aluminum-doped Ga2O3; tunable bandgap; growth mechanism; photodetector; ATOMIC LAYER DEPOSITION; OPTICAL BANDGAP; BUFFER LAYER; BETA-GA2O3; GROWTH; PERFORMANCE; GA;
D O I：
10.1088/1361-6528/ad1afc
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Aluminum-doped Ga2O3 (AGO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD). The growth mechanism, surface morphology, chemical composition, and optical properties of AGO films were systematically investigated. The bandgap of AGO films can be theoretically set between 4.65 and 6.8 eV. Based on typical AGO films, metal-semiconductor-metal photodetectors (PDs) were created, and their photoelectric response was examined. The preliminary results show that PE-ALD grown AGO films have high quality and tunable bandgap, and AGO PDs possess superior characterizations to undoped films. The AGO realized using PE-ALD is expected to be an important route for the development of a new generation of gallium oxide-based photodetectors into the deep-ultraviolet.
引用
收藏
页数：8
相关论文
共 50 条
  • [1] Chemical solution deposition of epitaxial indium- and aluminum-doped Ga2O3 thin films on sapphire with tunable bandgaps
    Tang, Xiao
    Li, Kuang-Hui
    Liao, Che-Hao
    Vasquez, Jose Manuel Taboada
    Wang, Chuanju
    Xiao, Na
    Li, Xiaohang
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2022, 42 (01) : 175 - 180
  • [2] Fabrication of cerium-doped β-Ga2O3 epitaxial thin films and deep ultraviolet photodetectors
    Li, Wenhao
    Zhao, Xiaolong
    Zhi, Yusong
    Zhang, Xuhui
    Chen, Zhengwei
    Chu, Xulong
    Yang, Hujiang
    Wu, Zhenping
    Tang, Weihua
    APPLIED OPTICS, 2018, 57 (03) : 538 - 543
  • [3] Luminescence of Cr-doped β-Ga2O3 thin films
    Bordun, O. M.
    Bordun, B. O.
    Kukharskyy, I. Yo.
    Maksymchuk, D. M.
    Medvid, I. I.
    PHYSICS AND CHEMISTRY OF SOLID STATE, 2023, 24 (03): : 490 - 494
  • [4] Sputtering Growth of Nitrogen-doped Ga2O3 Films and Applications of Photodetectors
    Wei, Sufen
    Shi, Qianqian
    Liu, Yi
    Yang, Cheng-Fu
    SENSORS AND MATERIALS, 2024, 36 (05) : 2127 - 2139
  • [5] Investigations of the growth and physical characteristics of ZNF2-DOPED GA2O3 thin films
    Wei, Sufen
    Kao, Chia-Yang
    Su, Zhi-Ting
    Tsao, En-Chi
    Chen, Guo-Syun
    Yang, Cheng-Fu
    Chang, Jui-Yang
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2025, 39 (06):
  • [6] Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
    Kokubun, Yoshihiro
    Miura, Kasumi
    Endo, Fumie
    Nakagomi, Shinji
    APPLIED PHYSICS LETTERS, 2007, 90 (03)
  • [7] Growth and characteristics of terbium doped Ga2O3 luminescent films
    Guo, Qixin
    Koga, Yushi
    Chen, Zewei
    Saito, Katsuhiko
    Tanaka, Tooru
    JOURNAL OF CRYSTAL GROWTH, 2023, 620
  • [8] Electrical characteristics of β-Ga2O3 thin films grown by PEALD
    Altuntas, Halit
    Donmez, Inci
    Ozgit-Akgun, Cagla
    Biyikli, Necmi
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 593 : 190 - 195
  • [9] Surface and Material Characteristics of Ga2O3 Thin Films on GaAs
    Huang, Ping-Fong
    Chen, Yen-Ting
    Lee, H. Y.
    Feng, Zhe Chuan
    Lin, Hao-Hsiung
    Lu, Weijie
    ADVANCES IN THIN-FILM COATINGS FOR OPTICAL APPLICATIONS V, 2008, 7067
  • [10] Growth of β-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template
    Jiao T.
    Li Z.-M.
    Wang Q.
    Dong X.
    Zhang Y.-T.
    Bai S.
    Zhang B.-L.
    Du G.-T.
    Faguang Xuebao/Chinese Journal of Luminescence, 2020, 41 (03): : 281 - 287
12345