Characteristics of tunable aluminum-doped Ga2O3 thin films and photodetectors

被引：0

作者：

Ding, Si-Tong ^{[1
]}

Chen, Yu-Chang ^{[1
]}

Yu, Qiu-Jun ^{[1
]}

Zeng, Guang ^{[1
]}

Shi, Cai-Yu ^{[1
]}

Shen, Lei ^{[1
]}

Zhao, Xue-Feng ^{[1
]}

Lu, Hong-Liang ^{[1
,2
]}

机构：

[1] Fudan Univ, Shanghai Inst Intelligent Elect & Syst, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[2] Jiashan Fudan Inst, Jiaxing, Zhejiang, Peoples R China

来源：

NANOTECHNOLOGY | 2024年 / 35卷 / 15期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

plasma-enhanced atomic layer deposition; aluminum-doped Ga2O3; tunable bandgap; growth mechanism; photodetector; ATOMIC LAYER DEPOSITION; OPTICAL BANDGAP; BUFFER LAYER; BETA-GA2O3; GROWTH; PERFORMANCE; GA;

D O I：

10.1088/1361-6528/ad1afc

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Aluminum-doped Ga2O3 (AGO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD). The growth mechanism, surface morphology, chemical composition, and optical properties of AGO films were systematically investigated. The bandgap of AGO films can be theoretically set between 4.65 and 6.8 eV. Based on typical AGO films, metal-semiconductor-metal photodetectors (PDs) were created, and their photoelectric response was examined. The preliminary results show that PE-ALD grown AGO films have high quality and tunable bandgap, and AGO PDs possess superior characterizations to undoped films. The AGO realized using PE-ALD is expected to be an important route for the development of a new generation of gallium oxide-based photodetectors into the deep-ultraviolet.

引用

页数：8

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