Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

被引：0
|
作者：
Parchinskiy, P. B. [1 ]
Gazizulina, A. S. [1 ]
Nasirov, A. A. [1 ]
机构：
[1] Natl Univ Uzbekistan, Tashkent, Uzbekistan
来源：
RUSSIAN PHYSICS JOURNAL | 2023年 / 65卷 / 10期
关键词：
anisotropy; negative magnetoresistance; epitaxial layer; ferromagnetic ordering; GaMnAs; Be; MAGNETIC-ANISOTROPY; TRANSITION; (GA; MN)AS; INPLANE;
D O I：
10.1007/s11182-023-02823-5
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effect of beryllium co-doping on the magnetoresistance anisotropy in the GaMnAs layer grown via low-temperature molecular beam epitaxy is investigated in this paper. The magnetoresistance anisotropy is observed in the GaMnAs:Be epilayer in the range of fields up to 2000 Oe along [110] and [1 (1) over bar0] crystalligraphic axes. This anisotropy manifests itself in the different behavior of the temperature dependence of magnetoresistance and can result from the formation of spatially oriented structures in the GaMnAs epilayer, which emerge in the bulk of this layer during its growth.
引用
收藏
页码：1732 / 1737
页数：6
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