The effect of Ga/N co-doping on electronic structure of InSb

被引：0

作者：

Zhang Hui-Yuan ^{[1
]}

Xing Huai-Zhong ^{[1
]}

Zhang Lei ^{[1
]}

机构：

[1] Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2012年 / 31卷 / 03期

基金：

中国国家自然科学基金;

关键词：

electronic structure; Ga/N co-doping; InSb; GENERALIZED GRADIENT APPROXIMATION; ALLOYS;

D O I：

10.3724/SP.J.1010.2012.00231

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The electronic structure and properties of zinc blende InSb co-doped with Ga and N have been investigated by means of the density functional theory based on first-principles pseudo potential calculations. It is found that single species of N or Ga doping has a small effect on the band gap of InSb. With Ga and N co-doped into InSb, its band gap is changed remarkably with the increase of co-doping level of Ga/N.

引用

页码：231 / 234

页数：4

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