EXPLORING THE FIELD EMISSION CAPABILITIES OF ALGAN/GAN NANOSCALE VACUUM DIODES

被引：0
|
作者：
Hernandez, Nathaniel [1 ]
Cahay, Marc [1 ]
O'Mara, Jonathan [2 ,3 ]
Ludwick, Jonathan [4 ,5 ]
Walker, Dennis E., Jr. [2 ]
Back, Tyson [4 ]
Hall, Harris [2 ]
机构：
[1] Univ Cincinnati, Spintron & Vacuum Nanoelectron Lab, Cincinnati, OH USA
[2] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH USA
[3] KBR, 4027 Colonel Glenn Hwy Suite 301, Beavercreek, OH USA
[4] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH USA
[5] UES, 2179 12th St, Wright Patterson AFB, OH USA
来源：
2023 IEEE 36TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, IVNC | 2023年
关键词：
Aluminum Gallium Nitride / Gallium Nitride; Field Emission from Two-Dimensional Electron Gas; Vacuum Nanodiode;
D O I：
10.1109/IVNC57695.2023.10188990
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We successfully demonstrate for the first-time field emission (FE) from and to the two-dimensional electron gas (2DEG) formed in AlGaN/GaN heterojunction based lateral nanoscale vacuum emission diodes. In addition, we demonstrate FE with an AlGaN/GaN cathode and metallic anode. Our FE measurements demonstrate that these vacuum diodes with AlGaN/GaN and metallic anodes can deliver emission current in the range of microamps to milliamps, respectively, when biased within a range from 5 to 30 V.
引用
收藏
页码：117 / 119
页数：3
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