Effects of constant voltage stress on bipolar degradation in 4H-SiC IGBT

被引：1

作者：

An, Yunlai ^{[1
]}

Zhang, Wenting ^{[1
]}

Tang, Xinling ^{[1
]}

Niu, Xiping ^{[1
]}

Wang, Liang ^{[1
]}

Yang, Xiaolei ^{[2
]}

Shen, Zhanwei ^{[3
]}

Sun, Junmin ^{[1
]}

Sang, Ling ^{[1
]}

Liu, Rui ^{[1
]}

Du, Zechen ^{[1
]}

Luo, Weixia ^{[1
]}

Li, Ling ^{[1
]}

Chen, Zhongyuan ^{[1
]}

Wei, Xiaoguang ^{[1
]}

Yang, Fei ^{[1
]}

机构：

[1] Beijing Inst Smart Energy, State Key Lab Adv Power Transmiss Technol, Beijing 102209, Peoples R China

[2] Nanjing Elect Devices Inst Corp, Nanjing 211899, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2023年 / 605卷

关键词：

A1; SiC; A2; IGBT; B1; Bipolar degradation; B2; Constant voltage stress;

D O I：

10.1016/j.jcrysgro.2023.127083

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The analysis of bipolar degradation in 18 kV SiC IGBT with constant voltage stress was studied. Its fabrication process as well as testing conditions of IGBT device structure were described. The output characteristics were used for analysis in testing of the degraded devices. In addition, it was revealed that the device with no defects on the surface of the epitaxial layer suffers from unexpected degradation under low voltage stress, while the device with poor performance was completely degraded under high voltage stress. The research results will be a good guidance for controlling defects of high-voltage devices in the process of substrate, epitaxy and chip fabrication.

引用

页数：5

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