Design and performance assessment of a vertical feedback FET

被引：9
|
作者：
Katta, Sai Shirov [1 ]
Kumari, Tripty [1 ]
Das, Subir [1 ]
Tiwari, Pramod Kumar [1 ]
机构：
[1] Indian Inst Technol Patna, Dept Elect Engn, Bihar 801106, India
来源：
MICROELECTRONICS JOURNAL | 2023年 / 137卷
关键词：
Feedback FET; Hysteresis; Interface trap charges; Steep-switching; Subthreshold swing; FIELD-EFFECT TRANSISTOR; FLASH MEMORY CELL; GATE; TFET;
D O I：
10.1016/j.mejo.2023.105806
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper proposes the structure of a vertical PNPN single gated feedback field-effect transistor (vertical FBFET) and investigates its performance using a TCAD simulator. The performance of the device is investigated against variations in a few geometrical and process parameters. The device exhibits an ultra-steep switching characteristic with a minimum subthreshold swing of 0.03 mV/dec and a high ON/OFF current ratio of similar to 1011. Subsequently, the hysteresis characteristic of the vertical FBFET is analyzed against variation in interface trap charges at Si and Al2O3 interfaces. Due to the presence of negative/positive interface trap charges at silicon and Al2O3 interface, the memory window is enlarged/reduced from 1.1 V to 1.21 V/0.96 V respectively. The vertical FBFET also shows a wide variation in the memory window for channel length and temperature variations.
引用
收藏
页数：6
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