Design and Analysis of a Novel Asymmetric Source Dual-Material DG-TFET with Germanium Pocket

This article proposes a novel asymmetric source dual-material double-gate Tunnel Field-Effect Transistor with Ge-pocket (ASDM-DGTFET). The use of a Ge-pocket near the source-channel interface helps in improving the device performance by narrowing the tunnelling barrier. To boost the tunnelling field strength, a high-kappa dielectric (HfO2) is used as a gate insulator. To enhance the switching ratio, a low work function of the metal gate is used on the source side. The proposed structure outperforms both traditional TFET and asymmetric source dual-material Double Gate TFET. The impact of varying the length of the source region under the gate has also been investigated. The lowest value of subthreshold swing (SS) is observed at 65 nm of source length in the proposed device. The proposed device provides a higher ON-state current of the order of 5 x 10(-4) A/mu m, a higher figure of merit of similar to 10(12) with an average SS of 23.9 mV/dec and a point SS of 10.8 mV/dec.