Direct CVD-growth and optoelectronic characterizations of monolayer ribbon-like MoS2 flakes

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) materials provide a perspective development for optoelectronic, catalytic and quantum devices. However, relative approach to modify corresponding physical performance via explicit synthetic control of edge structure and dimensionality is still an enormous challenge. Here, we elucidate the successful fabrication of high-yield monolayer ribbon-like MoS2 crystals via a catalyst-free chemical vapor deposition (CVD) strategy. These ribbon-like MoS2 flakes exhibit a monolayer feature with tunable width in the range of 0.6-4.2 mu m and a changed optical/electronic performance depending on the flake width. Furthermore, the proposed growth mechanism of such unique structures is analyzed at the basis of the change of Mo/S atom ratio. Our result emphasizes the potential to enable the successful preparation of special quasi one-dimensional (1D) TMDC structures for next-generation micro-nano optoelectronic devices.