Comparison of enhanced second harmonic generation in pyramid-like in-plane MoS2 flakes to vertically aligned MoS2 flakes

被引:5
|
作者
Agrawal, Abhay V. [1 ]
Lemasters, Robert [2 ]
Li, Chentao [2 ]
Mojibpour, Ali [3 ]
Bharadwaj, Palash [3 ]
Harutyunyan, Hayk [2 ]
Kumar, Mukesh [1 ]
机构
[1] Indian Inst Technol Ropar, Funct & Renewable Energy Mat Lab, Rupnagar 140001, Punjab, India
[2] Emory Univ, Dept Phys, Atlanta, GA 30322 USA
[3] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA
基金
美国国家科学基金会;
关键词
ACTIVE EDGE SITES; NONLINEAR OPTICS; GROWTH; TRANSITION; NANOSHEETS;
D O I
10.1063/5.0035738
中图分类号
O59 [应用物理学];
学科分类号
摘要
Here, we report the comparative study of enhanced second harmonic generation using defect engineering in pyramid-like MoS2 (P-MoS2) flakes to vertically aligned MoS2 (VA-MoS2) flakes. P-MoS2 and VA-MoS2 is synthesized via the modified chemical vapor deposition technique. The second harmonic generation measurements on P-MoS2 and VA-MoS2 are performed by sweeping the excitation wavelength from 1200nm to 1310nm in identical conditions. The P-MoS2 flakes show a high SHG signal. The high SHG signal in pyramid-like MoS2 is attributed to the broken inversion symmetry and high thickness of grown MoS2 flakes. VA-MoS2 flakes under the identical conditions show a 34% enhanced SHG signal in comparison to P-MoS2. The midgap states generated due to defects in the form of S vacancies in VA-MoS2 are responsible for this enhancement. These midgap states confine the photons and result in enhanced SHG properties. Our study will pave a new path to understand the role of 2D material morphology in fabricating versatile optical and photonics devices.
引用
收藏
页数:7
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