ELECTRON EMISSION CHARACTERISTICS OF FIELD EMITTER ARRAYS COATED WITH OVER-STOICHIOMETRIC HAFNIUM NITRIDE

被引：0
|
作者：
Osumi, Tomoaki [1 ,2 ]
Hori, Ryosuke [1 ]
Nagao, Masayoshi [2 ]
Murata, Hiromasa [2 ]
Gotoh, Yasuhito [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto, Japan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan
来源：
2023 IEEE 36TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, IVNC | 2023年
关键词：
field emitter array; hafnium nitride; nitrogen composition;
D O I：
10.1109/IVNC57695.2023.10189004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Field emitter arrays (FEAs) were fabricated with over-stoichiometric hafnium nitride (HfN1+x) thin films. Nitrogen compositions and oxygen impurities of the thin films were evaluated by backscattering spectrometry, and crystal structures by X-ray diffraction. Electron emission characteristics of the FEAs with HfN1+x were compared with those of FEAs with stoichiometric HfN. The emission currents of the FEAs with HfN1+x were lower than those of the FEAs with HfN at the same voltage. Emission currents of both FEAs showed gradual decrease in continuous emission test after 15 hours
引用
收藏
页码：172 / 173
页数：2
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