Emission characteristics of TiN-coated silicon field emitter arrays

被引：21
|
作者：
Kang, SY [1 ]
Lee, JH [1 ]
Song, YH [1 ]
Kim, YT [1 ]
Cho, KI [1 ]
Yoo, HJ [1 ]
机构：
[1] Elect & Telecommun Res Inst, Semicond Technol Div, Taejon 305600, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期
关键词：
D O I：
10.1116/1.590222
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We observed the emission characteristics and stability of TiN-coated Si field emitter arrays (FEAs) with a TIW gate structure. The TiN layer on Si tips was formed by a two-step rapid thermal nitridation process in an NH3 ambient by which a Ti layer was thermally converted to a TiN/TiSi2 bilayer. This process could suppress the formation of TiO2 on the surface and make the TiN layer thicker than a one-step process. By coating Si tips with TiN, the operating voltage of the TiN-coated Si FEAs was reduced by about 20 V compared with non-coated ones. Also, the TiN-coated Si FEAs showed thermally stable electron emission compared with non-coated ones. (C) 1998 American Vacuum Society. [S0734-211X(98)08002-0].
引用
收藏
页码：871 / 874
页数：4
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