Features of Processing of Cadmium Zinc Telluride Wafers for Molecular Beam Epitaxy Growth of Cadmium Mercury Telluride Layers

被引：1

作者：

Trofimov, A. A. ^{[1
]}

Denisov, I. A. ^{[2
]}

Smirnova, N. A. ^{[2
]}

Shabrin, A. D. ^{[1
]}

Goncharov, A. E. ^{[1
]}

Novikova, A. A. ^{[1
]}

Mozhaeva, M. O. ^{[1
]}

Gladysheva, K. A. ^{[1
]}

Kosyakova, A. M. ^{[1
,3
]}

Malygin, V. A. ^{[1
]}

Kuznetsova, S. A. ^{[1
]}

Ilyinov, D. V. ^{[1
]}

Sukhanova, A. S. ^{[1
]}

机构：

[1] Orion R&P Assoc, Moscow 111538, Russia

[2] AO Giredmet, Moscow 119017, Russia

[3] Moscow Inst Phys & Technol, Dolgoprudnyi 141701, Moscow Oblast, Russia

来源：

JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2023年 / 68卷 / 09期

关键词：

cadmium zinc telluride; lapping and polishing; surface roughness; molecular beam epitaxy;

D O I：

10.1134/S1064226923090255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The cadmium mercury telluride solid solution is one of the most important infrared photoelectronic materials in the world. In obtaining this compound, molecular beam epitaxy has a number of advantages over other methods. At the same time, this solid solution is quite demanding on the pre-growth processing of substrates. In this study, the polishing processes are the primary development in mastering the production of cadmium mercury telluride (211) wafers. A roughness value of similar to 1 nm is obtained.

引用

页码：1114 / 1125

页数：12

共 50 条

[31] Evaluation of perfection of cadmium telluride and cadmium zinc telluride substrates
Lal, K
Kumar, V
Sitharaman, S
Chavada, FR
Garg, AK
Nagpal, A
Gautam, M
Gupta, SC
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 795 - 798
[32] Evaluation of cadmium telluride and cadmium zinc telluride by transmission cathodoluminescence
Kapoor, AK
Sundersheshu, BS
Bagai, RK
Sharma, BB
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 786 - 790
[33] MODIFICATION OF MERCURY CADMIUM TELLURIDE, MERCURY MANGANESE TELLURIUM, AND MERCURY ZINC TELLURIDE BY ION ETCHING
BROGOWSKI, P
MUCHA, H
PIOTROWSKI, J
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 114 (01): : K37 - K40
[34] Adsorption on cadmium telluride and mercury telluride surfaces
Wijewardena, K.A.I.L.
Neilson, D.
Szymanski, J.
Metals forum, 1991, 15 (01): : 57 - 70
[35] RAMAN STUDIES OF CRYSTAL PERFECTION IN MERCURY CADMIUM TELLURIDE WAFERS
HILL, I
JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) : 4270 - 4275
[36] MECHANISMS IN THE PHOTOCHEMICAL GROWTH OF CADMIUM MERCURY TELLURIDE
MULLIN, JB
IRVINE, SJC
MECHANISMS OF REACTIONS OF ORGANOMETALLIC COMPOUNDS WITH SURFACES, 1989, 198 : 243 - 252
[37] SUBSTRATE ISSUES FOR THE GROWTH OF MERCURY CADMIUM TELLURIDE
TRIBOULET, R
TROMSONCARLI, A
LORANS, D
DUY, TN
JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) : 827 - 834
[38] PHOTOELECTRIC PROPERTIES OF CADMIUM TELLURIDE LAYERS ACTIVATED WITH MERCURY
SHNEIDER, AD
ZHMURKO, IS
SOVIET PHYSICS-SOLID STATE, 1962, 4 (03): : 591 - 592
[39] THE CRYSTAL-GROWTH OF CADMIUM MERCURY TELLURIDE
MICKLETHWAITE, WFH
SEMICONDUCTORS AND SEMIMETALS, 1981, 18 : 47 - 119
[40] MERCURY CADMIUM TELLURIDE N-ISOTYPE HETEROJUNCTIONS GROWN INSITU BY MOLECULAR-BEAM EPITAXY
BOUKERCHE, M
SOU, IK
DESOUZA, M
YOO, SS
FAURIE, JP
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3119 - 3123

← 1 2 3 4 5 →