Improving the Synaptic Behavior with Polar Orthorhombic Phase in Hf0.5Zr0.5O2 Film

被引：2
|
作者：
Zhu, Zihao [1 ,2 ,3 ]
Yang, Hui [1 ,2 ,3 ]
Huang, Xiang [1 ,2 ,3 ]
Wang, Zhaoyang [1 ,2 ,3 ]
Zhang, Yi [1 ,2 ,3 ]
Chen, Weijin [1 ,2 ,3 ]
Zhang, Bangmin [1 ,2 ,3 ]
Zheng, Yue [1 ,2 ,3 ]
机构：
[1] Sun Yat Sen Univ, Sch Phys, Guangdong Prov Key Lab Magnetoelectr Phys & Device, Guangzhou 510275, Peoples R China
[2] Sun Yat Sen Univ, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
[3] Sun Yat Sen Univ, Ctr Phys Mech & Biophys, Sch Phys, Guangzhou 510275, Peoples R China
来源：
ACS APPLIED ELECTRONIC MATERIALS | 2023年 / 5卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Hf0; 5Zr0; 5O2; resistanceswitching; polar orthorhombic phase; synaptic behavior; microstructure; THIN-FILMS; FERROELECTRICITY; MEMRISTOR; DEVICE; HAFNIA; HFO2;
D O I：
10.1021/acsaelm.3c00902
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As a high-& kappa; dielectric material,hafnium oxidehas excellentpotential for applications in the fields of both memristor and ferroelectricmaterials. It is now mostly believed that the ferroelectricity ofhafnium oxide films originates from the polar orthorhombic phase.The effect of this polar orthorhombic phase on the memristor propertiesof the hafnium oxide films is still uncertain. In this work, the proportionof the orthorhombic phase in the films was influenced by varying thepreparation parameters, and the microstructure was further determinedby microscopic characterization. High cooling rate favors the orthorhombicphase and more uniform microstructure, and the multiresistance stateand synaptic behavior of the HZO film was investigated, which showsthat the HZO film in the orthorhombic phase has good potential inmemristor applications.
引用
收藏
页码：4682 / 4689
页数：8
相关论文
共 50 条
  • [21] Origin of morphotropic phase boundary in thin-film Hf0.5Zr0.5O2 on the TiN electrode
    Lee, Il Young
    Yu, Jaejun
    JOURNAL OF APPLIED PHYSICS, 2023, 134 (07)
  • [22] Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors
    Wen Di Zhang
    Zi Zheng Song
    Shu Qi Tang
    Jin Chen Wei
    Yan Cheng
    Bing Li
    Shi You Chen
    Zi Bin Chen
    An Quan Jiang
    Nature Communications, 16 (1)
  • [23] Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 Film
    Lee, Dong Hyun
    Park, Geun Hyeong
    Kim, Se Hyun
    Yang, Kun
    Lee, Jaewook
    Choi, Hyojun
    Lee, Younghwan
    Ryu, Jin Ju
    Lee, Je In
    Kim, Gun Hwan
    Park, Min Hyuk
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (09) : 1440 - 1443
  • [24] Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes
    Liu, Keqin
    Dang, Bingjie
    Yang, Zhiyu
    Zhang, Teng
    Yang, Zhen
    Bai, Jinxuan
    Pan, Zelun
    Huang, Ru
    Yang, Yuchao
    SCIENCE CHINA-INFORMATION SCIENCES, 2024, 67 (08)
  • [25] Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface
    Dmitriyeva, Anna
    Mikheev, Vitalii
    Zarubin, Sergei
    Chouprik, Anastasia
    Vinai, Giovanni
    Polewczyk, Vincent
    Torelli, Piero
    Matveyev, Yury
    Schlueter, Christoph
    Karateev, Igor
    Yang, Qiong
    Chen, Zhaojin
    Tao, Lingling
    Tsymbal, Evgeny Y.
    Zenkevich, Andrei
    ACS NANO, 2021, 15 (09) : 14891 - 14902
  • [26] Persistent spin texture in ferroelectric Hf0.5Zr0.5O2
    Li, Huinan
    Chen, Xu
    Zhang, Qin
    Dou, Mingbo
    Yu, Yue
    Zhuravlev, M. Ye.
    Nikolaev, A. V.
    Wang, Xianjie
    Tao, L. L.
    APPLIED PHYSICS LETTERS, 2024, 124 (12)
  • [27] Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface
    Hamouda, W.
    Pancotti, A.
    Lubin, C.
    Tortech, L.
    Richter, C.
    Mikolajick, T.
    Schroeder, U.
    Barrett, N.
    JOURNAL OF APPLIED PHYSICS, 2020, 127 (06)
  • [28] Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
    Chernikova, Anna
    Kozodaev, Maksim
    Markeev, Andrei
    Negrov, Dmitrii
    Spiridonov, Maksim
    Zarubin, Sergei
    Bak, Ohheum
    Buraohain, Pratyush
    Lu, Haidong
    Suvorova, Elena
    Gruverman, Alexei
    Zenkevich, Andrei
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (11) : 7232 - 7237
  • [29] Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films
    Shimizu, Takao
    Yokouchi, Tatsuhiko
    Oikawa, Takahiro
    Shiraishi, Takahisa
    Kiguchi, Takanori
    Akama, Akihiro
    Konno, Toyohiko J.
    Gruverman, Alexei
    Funakubo, Hiroshi
    APPLIED PHYSICS LETTERS, 2015, 106 (11)
  • [30] Quantifying non-centrosymmetric orthorhombic phase fraction in 10nm ferroelectric Hf0.5Zr0.5O2 films
    Mukundan, Vineetha
    Consiglio, Steven
    Triyoso, Dina H.
    Tapily, Kandabara
    Schujman, Sandra
    Mart, Clemens
    Kaempfe, Thomas
    Weinreich, Wenke
    Jordan-Sweet, Jean
    Clark, Robert D.
    Leusink, Gert J.
    Diebold, Alain C.
    APPLIED PHYSICS LETTERS, 2020, 117 (26)
12345