R-inmac: 10T SRAM based reconfigurable and efficient in-memory advance computation for edge devices

被引:0
|
作者
Dhakad, Narendra Singh [1 ,2 ]
Chittora, Eshika [1 ]
Sharma, Vishal [3 ]
Vishvakarma, Santosh Kumar [1 ]
机构
[1] Indian Inst Technol Indore, Dept Elect Engn, Indore 453552, Madhya Pradesh, India
[2] Purdue Univ, Elmore Family Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[3] Nanyang Technol Univ, Sch EEE, Ctr Integrated Circuits & Syst, Singapore 639798, Singapore
关键词
In-memory computing; SRAM; Edge AI; Von-Neumann bottleneck; Reconfigurable architecture; Binary neural network; LOW-POWER; CELL;
D O I
10.1007/s10470-023-02181-9
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper proposes a Reconfigurable In-Memory Advance Computing architecture using a novel 10 SRAM cell. In addition to basic logic operations, the proposed R-InMAC can also implement complex Boolean computing operations such as binary addition/subtraction, binary-to-gray, gray-to-binary conversion, 2's complement, less/greater than, and increment/decrement. Furthermore, content addressable memory (CAM) operation to search a binary string in a memory array is also proposed efficiently. It can search true and complementary data strings in a single cycle. The proposed R-InMAC architecture's reconfigurability allows it to be configured according to the needed operation and bit precision, making it ideal and energy-efficient. In addition, compared to the standard SRAM cells, the proposed 10T cell is suited for implementing the XNOR-based binary convolution operation required in Binary Neural Networks (BNNs) with improved latency of 58.89%. The optimized full adder of the proposed R-InMAC shows decrement in the area by 40%, static power by 28%, dynamic power by 55.2%, and latency by 25.3% as compared to conventional designs, making this work a promising candidate for modern edge AI compute in-memory systems.
引用
收藏
页码:161 / 184
页数:24
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