Chemical Bath Deposition of Zn1-xSnxOy Films as Buffer Layers for Cu(In,Ga)Se2 Solar Cells

被引:5
|
作者
Garzon, Diego A. [1 ,2 ]
Rossi, Christian [1 ,3 ]
Khatri, Ishwor [1 ]
Soggia, Francesco [3 ]
Caha, Ihsan [1 ]
Deepak, Francis Leonard [1 ]
Colombara, Diego [3 ]
Sadewasser, Sascha [1 ]
机构
[1] Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga S-N, P-4715330 Braga, Portugal
[2] Univ Porto, Fac Ciencias, Dept Quim & Bioquim, Rua Campo Alegre 687, P-4169007 Porto, Portugal
[3] Univ Genoa, Dept Chem & Ind Chem, via Dodecaneso 31, I-16146 Genoa, Italy
基金
欧盟地平线“2020”;
关键词
buffer layers; chemical bath deposition; CIGSe; thin film solar cells; zinc tin oxide; OXIDE THIN-FILMS; ZINC-OXIDE; ZNSN(OH)(6); TEMPERATURE; SNO2; ZNO; CDS; TRANSPARENT; SURFACE; IMPACT;
D O I
10.1002/solr.202300173
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Cu(In,Ga)Se-2 (CIGSe) thin-film solar cells are a commercial photovoltaic technology that provides sustainable power. Herein, the formation of Zn1-xSnxOy (ZTO) thin films is studied as Cd-free buffer layer by chemical bath deposition (CBD) suitable for CIGSe solar cell devices. ZTO films are obtained by CBD onto soda lime glass, by modifying a reported procedure otherwise leading to columnar ZnO thin films. These ZTO films show a flatter morphology compared to the reference ZnO due to inhibition of the columnar growth. In addition, a nontrivial increase in the bandgap is observed by enhancing Sn concentration. When a concentration of 20% [Sn]/([Sn] + [Zn]) (where [Sn] and [Zn] are the molar concentrations of Sn and Zn, respectively) is employed in the chemical bath, the resulting buffer layer allows the CIGSe solar cell to achieve similar performance as with a CdS buffer layer (average efficiency of (11 +/- 2)%), yielding a maximum efficiency of 10.4%, with an average of (9 +/- 2)%.
引用
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页数:8
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