Fabrication and characterization of Al/Ta thin films as metal junctions for solar cell applications

被引:0
|
作者
Monga, Kamil [1 ]
Labbafi, Larak [2 ]
Trivedi, Harshita [3 ]
Ghorannevis, Zohreh [2 ]
Parmar, Avanish Singh [3 ]
Chaudhary, Shilpi [1 ]
机构
[1] Punjab Engn Coll, Dept Appl Sci, Chandigarh 160012, India
[2] Islamic Azad Univ, Dept Phys, Karaj Branch, Karaj, Iran
[3] Indian Inst Technol BHU, Dept Phys, Varanasi 221005, India
关键词
Ta; Al thin film; Direct current magnetron sputtering; Sheet resistance; Metal junction; ALPHA; BETA;
D O I
10.1016/j.mlblux.2022.100174
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present work, the effect of deposition time (10 min, 20 min, and 30 min) on the structural, morphological, and electrical properties of Al/Ta thin films has been investigated. The XRD and microscopy results revealed that the thin films exhibit a bcc structure, with a strong (110) preferred orientation and followed a columnar growth with grain sizes lower than 100 nm. Thin film with 20-min deposition time exhibits less average roughness and better morphology than 10-min and 30-min. Further, the average resistance was smallest for thin films with 20 -min of deposition time along with the optical reflectance between 50 and 85% in wavelength region of 400-1000 nm. The Al/Ta thin film can be employed as an excellent back-contact material for thinfilm solar cells due to its improved crystallinity, reflectance, and lower resistivity.
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页数:4
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