INFLUENCE OF ELECTRON IRRADIATION WITH E = 2 MeV ON ELECTROPHYSICAL AND OPTICAL CHARACTERISTICS OF GREEN InGaN/GaN LEDs

被引：0
|
作者：
Mosiuk, T. I. [1 ]
Vernydub, R. M. [1 ]
Lytovchenko, P. G. [2 ]
Myroshnichenko, Yu. B. [1 ]
Stratilat, D. P. [2 ]
Tartachnyk, V. P. [2 ]
Shlapatska, V. V. [3 ]
机构：
[1] Natl Pedag DragoManov Univ, Kiev, Ukraine
[2] Natl Acad Sci Ukraine, Inst Nucl Res, Kiev, Ukraine
[3] Natl Acad Sci Ukraine, LV Pisarzhevski Phys Chem Inst, Kiev, Ukraine
来源：
NUCLEAR PHYSICS AND ATOMIC ENERGY | 2023年 / 24卷 / 01期
关键词：
InGaN; light emitting diode; negative differential resistance; current-voltage characteristics; electro-luminescence characteristics;
D O I：
10.15407/jnpae2023.01.027
中图分类号：
O57 [原子核物理学、高能物理学];
学科分类号：
070202 ;
摘要：
We studied light-emitting diodes (LEDs) with quantum dots мade on basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 & DIVIDE; 300 K. On the current-voltage characteristics in the range of 77 & DIVIDE; 150 K, areas of negative differential resistance, as well as a fine structure of radiation spectra, were detected. The results of the influence of electron irradiation (Ee = 2 MeV) on electroluminescence characteristics intensity and quantum yield of the studied samples are presented; the features of the temperature dependence of the glow intensity of irradiated LEDs were revealed.
引用
收藏
页码：27 / 33
页数：7
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