The role of indium composition in InxGa1-xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

被引：2

作者：

Das, Samadrita ^{[1
]}

Lenka, Trupti Ranjan ^{[1
,4
]}

Talukdar, Fazal Ahmed ^{[1
]}

Nguyen, Hieu Pham Trung ^{[2
]}

Crupi, Giovanni ^{[3
]}

机构：

[1] Natl Inst Technol Silchar, Dept Elect & Commun Engn, Silchar, Assam, India

[2] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX USA

[3] Univ Messina, BIOMORF Dept, Messina, Italy

[4] Natl Inst Technol Silchar, Dept Elect & Commun Engn, Silchar 788010, Assam, India

来源：

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS | 2024年 / 37卷 / 02期

关键词：

electron blocking layer (EBL); GaN; LED; multi-quantum well (MQW); quantum-confined Stark effect (QCSE); POLARIZATION;

D O I：

10.1002/jnm.3169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of InxGa1-xN/GaN, which are inserted between the GaN/InGaN multi-quantum wells (MQWs) and n-GaN layer. This study signifies the role of prestrained layers on the piezoelectric polarization of LED nanowires, for enhanced luminescence. When compared with the conventional one, the EBL free LED nanowire with prestrained layer shows an enhancement of similar to 2.897% efficiency, which occurs due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer obtains a maximum efficiency of 85.21% along with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III-nitride LED nanostructure allows for achieving superior optical power across the output spectral range.

引用

页数：11