共 50 条
B-site doping with bismuth ion enhances the efficiency and stability of inorganic CsSnI3 perovskite solar cell
被引:3
|作者:
Wang, Guiqiang
[1
]
Cheng, Long
[1
]
Bi, Jiayu
[1
]
Chang, Jiarun
[1
]
Meng, Fanning
[1
]
机构:
[1] Bohai Univ, Sch Chem & Mat, Jinzhou 121003, Peoples R China
关键词:
B-site doping;
Semiconductors;
Stability;
Thin films;
Solar energy materials;
D O I:
10.1016/j.matlet.2023.135394
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
B-site doping with bismuth ion (Bi3+) is adopted to enhance the quality and stability of CsSnI3 perovskite. The partial displacement of Sn2+ with Bi3+ can not only improve the morphology, crystallinity, and stability of CsSnI3 perovskite film, but also reduce the trap density of CsSnI3 perovskite. Consequently, the fabricated perovskite solar cell with Bi3+-doped CsSnI3 perovskite deliver a high power conversion efficiency of 6.11 %, which is increased by 77 % compared to the efficiency of the control cell. In addition, the device without any encapsulation preserves over 72 % of its initial efficiency after storage in ambient condition for 240 h.
引用
收藏
页数:4
相关论文