B-site doping with bismuth ion enhances the efficiency and stability of inorganic CsSnI3 perovskite solar cell

被引：3

作者：

Wang, Guiqiang ^{[1
]}

Cheng, Long ^{[1
]}

Bi, Jiayu ^{[1
]}

Chang, Jiarun ^{[1
]}

Meng, Fanning ^{[1
]}

机构：

[1] Bohai Univ, Sch Chem & Mat, Jinzhou 121003, Peoples R China

来源：

MATERIALS LETTERS | 2024年 / 354卷

关键词：

B-site doping; Semiconductors; Stability; Thin films; Solar energy materials;

D O I：

10.1016/j.matlet.2023.135394

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

B-site doping with bismuth ion (Bi3+) is adopted to enhance the quality and stability of CsSnI3 perovskite. The partial displacement of Sn2+ with Bi3+ can not only improve the morphology, crystallinity, and stability of CsSnI3 perovskite film, but also reduce the trap density of CsSnI3 perovskite. Consequently, the fabricated perovskite solar cell with Bi3+-doped CsSnI3 perovskite deliver a high power conversion efficiency of 6.11 %, which is increased by 77 % compared to the efficiency of the control cell. In addition, the device without any encapsulation preserves over 72 % of its initial efficiency after storage in ambient condition for 240 h.

引用

页数：4

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