B-site doping with bismuth ion enhances the efficiency and stability of inorganic CsSnI3 perovskite solar cell

被引：3
|
作者：
Wang, Guiqiang [1 ]
Cheng, Long [1 ]
Bi, Jiayu [1 ]
Chang, Jiarun [1 ]
Meng, Fanning [1 ]
机构：
[1] Bohai Univ, Sch Chem & Mat, Jinzhou 121003, Peoples R China
来源：
MATERIALS LETTERS | 2024年 / 354卷
关键词：
B-site doping; Semiconductors; Stability; Thin films; Solar energy materials;
D O I：
10.1016/j.matlet.2023.135394
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
B-site doping with bismuth ion (Bi3+) is adopted to enhance the quality and stability of CsSnI3 perovskite. The partial displacement of Sn2+ with Bi3+ can not only improve the morphology, crystallinity, and stability of CsSnI3 perovskite film, but also reduce the trap density of CsSnI3 perovskite. Consequently, the fabricated perovskite solar cell with Bi3+-doped CsSnI3 perovskite deliver a high power conversion efficiency of 6.11 %, which is increased by 77 % compared to the efficiency of the control cell. In addition, the device without any encapsulation preserves over 72 % of its initial efficiency after storage in ambient condition for 240 h.
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页数：4
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