Methods of Measurement of Die Temperature of Semiconductor Elements: A Review

被引：6

作者：

Dziarski, Krzysztof ^{[1
]}

Hulewicz, Arkadiusz ^{[2
]}

Kuwalek, Piotr ^{[2
]}

Wiczynski, Grzegorz ^{[2
]}

机构：

[1] Poznan Univ Tech, Inst Elect Power Engn, Piotrowo St 3A, PL-60965 Poznan, Poland

[2] Poznan Univ Tech, Inst Elect Engn & Elect, Piotrowo St 3A, PL-60965 Poznan, Poland

来源：

ENERGIES | 2023年 / 16卷 / 06期

关键词：

current gain; electrical resistance; finite element method; forward voltage; Fourier law; junction-case resistance; liquid crystal; semiconductor; semiconductor die; threshold voltage; thermoreflectance; LIQUID-CRYSTAL THERMOGRAPHY; JUNCTION TEMPERATURE; DEVICES; EFFICIENCY; PHOSPHORS; SENSOR;

D O I：

10.3390/en16062559

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Monitoring the temperature of a semiconductor component allows for the prediction of potential failures, optimization of the selected cooling system, and extension of the useful life of the semiconductor component. There are many methods of measuring the crystal temperature of the semiconductor element referred to as a die. The resolution and accuracy of the measurements depend on the chosen method. This paper describes known methods for measuring and imaging the temperature distribution on the die surface of a semiconductor device. Relationships are also described that allow one to determine the die temperature on the basis of the case temperature. Current trends and directions of development for die temperature measurement methods are indicated.

引用

页数：25

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