Temperature measurements of semiconductor devices - A review

被引:269
|
作者
Blackburn, DL [1 ]
机构
[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
关键词
electrical; measurements; optical; semiconductor; temperature;
D O I
10.1109/STHERM.2004.1291304
中图分类号
O414.1 [热力学];
学科分类号
摘要
There are numerous methods for measuring the temperature of an operating semiconductor device. The methods can be broadly placed into three generic categories: electrical, optical, and physically contacting. The fundamentals underlying each of the categories are discussed, and a review of the variety of techniques within each category is given. Some of the advantages and disadvantages as well as the spatial, time, and temperature resolution are also provided.
引用
收藏
页码:70 / 80
页数:11
相关论文
共 50 条
  • [1] A Low Temperature Cell for High Frequency Electrophysical Measurements of Semiconductor Devices
    K. P. Aimaganbetov
    A. U. Aldiyarov
    S. R. Zhantuarov
    N. Zh. Almasov
    E. I. Terukov
    N. S. Tokmoldin
    Instruments and Experimental Techniques, 2021, 64 : 886 - 890
  • [2] A Low Temperature Cell for High Frequency Electrophysical Measurements of Semiconductor Devices
    Aimaganbetov, K. P.
    Aldiyarov, A. U.
    Zhantuarov, S. R.
    Almasov, N. Zh
    Terukov, E., I
    Tokmoldin, N. S.
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2021, 64 (06) : 886 - 890
  • [3] Temperature measurement of semiconductor devices
    Blackburn, DL
    THERMAL CHALLENGES IN NEXT GENERATION ELECTRONIC SYSTEMS, 2002, : 23 - 24
  • [4] Review of semiconductor devices and other power electronics components at cryogenic temperature
    Liao, Yuchuan
    Elwakeel, Abdelrahman
    Xiao, Yudi
    Alzola, Rafael Pena
    Zhang, Min
    Yuan, Weijia
    Feliciano, Alfonso J. Cruz
    Graber, Lukas
    IENERGY, 2024, 3 (02): : 95 - 107
  • [5] Measurements of Noise in Semiconductor Devices.
    Spiralski, Ludwik
    Elektronika Warszawa, 1980, 21 (11): : 15 - 22
  • [6] REVIEW OF OTHER SEMICONDUCTOR DEVICES
    ANGELLO, SJ
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 968 - 973
  • [7] SEMICONDUCTOR AND MATERIALS DEVICES CHARACTERIZATION BY NOISE MEASUREMENTS
    GRAFFEUIL, J
    BLASQUEZ, G
    ACTA ELECTRONICA, 1983, 25 (03): : 261 - 279
  • [8] SYMPOSIUM ON TEST METHODS AND MEASUREMENTS OF SEMICONDUCTOR DEVICES
    SANDEROV.V
    KODES, J
    CESKOSLOVENSKY CASOPIS PRO FYSIKU SEKCE A, 1968, 18 (04): : 477 - &
  • [9] A REVIEW OF WBG POWER SEMICONDUCTOR DEVICES
    Millan, Jose
    2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2012, 2 : 57 - 66
  • [10] Temperature adaptive driving of power semiconductor devices
    Wu, Liang
    Castellazzi, Alberto
    IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (ISIE 2010), 2010, : 1110 - 1114