Satisfiability Attack-Resilient Camouflaged Multiple Multivariable Logic-in-Memory Exploiting 3D NAND Flash Array

被引:1
|
作者
Swaroop, Bhogi Satya [1 ]
Saxena, Ayush [1 ]
Sahay, Shubham [1 ]
机构
[1] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur 208016, India
关键词
3D NAND flash; logic-in-memory; reverse engineering; IC camouflaging; SAT attack;
D O I
10.1109/TCSI.2023.3326332
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Logic-in-memory implementations have attracted significant attention recently for energy efficient in-situ processing of big data in this era of IoT. However, the emerging memory technologies such as RRAMs, PCMs, STT-MRAMs, etc. are still immature and exhibit significant spatial and temporal variations limiting the yield and the size of crossbar arrays available for implementing logic functions. Considering the technological maturity, ultra-high density and ultra-low cost of 3D NAND flash memory, in this work, we have proposed a novel methodology to exploit 3D NAND flash memory for realizing any logic function in sum-of-product form (SOP) with <= 177 literals/inputs and <= 2(14) minterms parallelly. Moreover, all the logic functions realized using the proposed technique appear same at the layout level rendering the logic-in-memory implementation utilizing the 3D NAND flash memory an innate camouflaging property and an inherent immunity against security vulnerabilities in the semiconductor supply chain. We have also evaluated the resiliency of the proposed technique against reverse engineering attacks such as SAT attacks, ATPG attacks and brute force attacks on ISCAS'85 and ISCAS'89 benchmark circuits. Our results indicate that the proposed logic-in-memory implementation facilitates complete obfuscation of the logic function without introducing any area overhead and exhibits a strong resiliency against reverse engineering.
引用
收藏
页码:660 / 669
页数:10
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